Luminescence of theDXcenter in AlGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101608
Reference15 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs
4. Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
5. Physical origin of theDXcenter
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1. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures;Semiconductor Science and Technology;2018-08-22
2. Photoluminescence due to hole capturing of DX− centers in In0.32Ga0.68P : S;Solid State Communications;1998-01
3. Photoluminescence of the Se and Si DX centers in (AlxGa1−x)0.5In0.5P (x<0.5) grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1997-08
4. Investigation of a New Photoluminescence Band at 1.727 eV in Si-Doped Ga0.71Al0.29As;physica status solidi (b);1997-06
5. Localized system with a mobility edge in epitaxial compensated AlxGa1−xAs;Journal of Applied Physics;1996-01
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