Chapter 6 DX and Related Defects in Semiconductors-Reference-Cited by-同舟云学术

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Chapter 6 DX and Related Defects in Semiconductors

Published:1993 Issue: Volume: Page:235-291
ISSN:0080-8784
Container-title:Imperfections in III/V Materials
language:
Short-container-title:

Author:

Malloy Kevin J.,Khachaturyan Ken

Publisher

Elsevier

Reference193 articles.

1. Model for the Electronic Structure of Amorphous Semiconductors

2. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --

3. Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure

4. Preparation of Black Phosphorus Single Crystals by a Completely Closed Bismuth-Flux Method and Their Crystal Morphology

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