Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices;Journal of Applied Physics;1996-09
2. Chapter 6 DX and Related Defects in Semiconductors;Imperfections in III/V Materials;1993
3. Characterization of Si-doped GaAs/AlGaAs short-period superlattice (SPS);Superlattices and Microstructures;1991-01
4. Technology for III/V-Semiconductor HFET Devices;III-V Microelectronics;1991
5. Properties of DX Centers in AlxGa1−xAs and Effects on Heterojunction Devices;MRS Proceedings;1990
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