Electrical characterization of AlAs layers and GaAs‐AlAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345248
Reference7 articles.
1. Point defects in GaAs-Ga1−xAlxAs superlattices
2. Electric field induced localization in GaAlAs‐GaAs superlattices
3. Suppression ofDXcenters in GaAlAs‐GaAs heterostructures
4. DXcenter inGa1−xAlxAs alloys
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Application of superlattices to the investigation of resonant defect in GaAs layers;Applied Physics Letters;1995-04-24
2. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993
3. Intrinsic properties of the ferromagnetic R14Fe78B8−xCx compounds;Journal of Magnetism and Magnetic Materials;1991-03
4. Characterization ofDXcenters in selectively doped GaAs‐AlAs superlattices;Applied Physics Letters;1990-09-24
5. Energy level associated with theDXcenter inGa1−xAlxAs;Physical Review B;1990-04-15
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