DXcenter inGa1−xAlxAs alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.7663/fulltext
Reference42 articles.
1. Investigation of theDXcenter in heavily dopedn-GaAs
2. Direct evidence of theDXcenter link to theL‐conduction‐band minimum in GaAlAs
3. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
4. Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs
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2. Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices;Physical Review B;2007-06-20
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