Determination of donor and DX center capture characteristics by pulsed photoluminescence
Author:
Affiliation:
1. Institute of Quantum Matter/Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5024345
Reference40 articles.
1. Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
2. Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states
3. Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN
4. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
5. Study of theDXcenter fine structure in ion‐implanted Al0.27Ga0.73As processed by rapid thermal annealing
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1. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity;Journal of Luminescence;2022-12
2. Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN);Journal of Applied Physics;2021-03-21
3. Extremely Slow Decay of Yellow Luminescence in Be-Doped GaN and Its Identification;physica status solidi (b);2018-08-13
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