Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)
Author:
Affiliation:
1. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0044519
Reference67 articles.
1. Band structure and fundamental optical transitions in wurtzite AlN
2. Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
3. Advances in group III-nitride-based deep UV light-emitting diode technology
4. Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications
5. Large-area AlN substrates for electronic applications: An industrial perspective
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