Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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4. Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data
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