Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data-Reference-Cited by-同舟云学术

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Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

Published:1999-01-01 Issue:10A Volume:32 Page:A56-A60
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Schuster M,Gervais P O,Jobst B,Hösler W,Averbeck R,Riechert H,Iberl A,Stömmer R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/32/i=10A/a=312/pdf

Reference38 articles.

1. GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Determination of the lattice constant of epitaxial layers of III-V compounds

4. X-ray diffraction studies of thin films and multilayer structures

5. Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs

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