Investigation of Ostwald ripening in nitrogen doped Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041835
Reference18 articles.
1. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
2. Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals
3. On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
4. Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials;von Ammon W.,2004
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1. Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2018-02
2. Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction;Journal of Applied Physics;2014-03-28
3. Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing;Japanese Journal of Applied Physics;2010-08-05
4. High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon;Thin Solid Films;2010-02
5. Effect of nitrogen doping on nanomechanical and surface properties of silicon film;Current Applied Physics;2009-11
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