Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868586
Reference39 articles.
1. Diffuse X-Ray Scattering in Fast-Neutron-Irradiated Copper Crystals
2. In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source
3. Experimental tests of the statistical dynamical theory
4. Experimental verification of the statistical dynamical theories of diffraction
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1. Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction;AIP Advances;2020-10-01
2. Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction;Journal of Crystal Growth;2017-12
3. Oxygen in silicon: Switch in the diffusion-mediated mechanism;Physical Review B;2017-11-21
4. Characterization of Nanometer‐Sized Oxygen Precipitates in Highly B‐Doped Czochralski Silicon;physica status solidi c;2017-11-17
5. Deterministic Bragg Coherent Diffraction Imaging;Scientific Reports;2017-04-25
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