Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing-Reference-Cited by-同舟云学术

Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing

Published:2010-08-05 Issue:8 Volume:49 Page:080205
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Araki Koji,Sudo Haruo,Aoki Tatsuhiko,Senda Takeshi,Isogai Hiromichi,Tsubota Hiroyuki,Miyashita Moriya,Matsumura Hisashi,Saito Hiroyuki,Maeda Susumu,Kashima Kazuhiko,Izunome Koji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. Impact of Defects in Silicon Substrate on Flash Memory Characteristics

2. Mechanical strength of silicon crystals as a function of the oxygen concentration

3. Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method

4. Mechanical properties of heat‐treated Czochralski‐grown silicon crystals

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3. Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation;Journal of Applied Physics;2018-04-28

4. Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II;ECS Solid State Letters;2014-07-22

5. Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals;ECS Journal of Solid State Science and Technology;2012-12-28