Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing-Reference-Cited by-同舟云学术

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Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

Published:2019-08-05 Issue:17 Volume:216 Page:1900325
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Müller Timo¹^ORCID,Gehmlich Michael¹,Sattler Andreas¹,Kissinger Gudrun²,Kot Dawid²,Daub Erich¹,Miller Alfred¹

Affiliation:

1. Research & Development (Technology)Siltronic AG Johannes‐Hess‐Straße 24 84489 Burghausen Germany

2. Department Materials Research/Adaptive MaterialsIHP – Leibniz-Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt/Oder Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900325

Reference31 articles.

1. Chapter 14 Oxygen Effect on Electronic Device Performance

2. Behavior of Transition Metals Penetrating Silicon Substrate through SiO2and Si3N4Films by Arsenic Ion Implantation and Annealing

3. Metal Impurities in Silicon- and Germanium-Based Technologies

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of Nitrogen Indiffusion and Its Impact on Silicon Wafer Strength;physica status solidi (a);2021-07-30

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