Simulation of Nitrogen Indiffusion and Its Impact on Silicon Wafer Strength-Reference-Cited by-同舟云学术

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Simulation of Nitrogen Indiffusion and Its Impact on Silicon Wafer Strength

Published:2021-07-30 Issue:23 Volume:218 Page:2100210
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Müller Timo¹^ORCID,Kissinger Gudrun²^ORCID,Kot Dawid²^ORCID,Gehmlich Michael¹,Boy Michael¹,Vollkopf Alexander¹,Sattler Andreas¹^ORCID,Miller Alfred¹

Affiliation:

1. Siltronic AG Einsteinstrasse 172 81677 München Germany

2. IHP–Leibniz-Institut für innovative Mikroelektronik Im Technologiepark 25 15236 Frankfurt (Oder) Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100210

Reference15 articles.

1. Nitrogen in Silicon

2. Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

3. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

4. Generation of Deep Level by Nitrogen Diffusion in Si

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon;Modern Physics Letters B;2023-04-11

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