Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices-Reference-Cited by-同舟云学术

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Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

Published:2012-12-03 Issue:23 Volume:101 Page:232109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xinwei,Saadat Omair I.,Xi Bin,Lou Xiabing,Molnar Richard J.,Palacios Tomás,Gordon Roy G.

Funder

U.S. Department of Energy

Office of Naval Research

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4770071

Reference16 articles.

1. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

2. Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

3. Band offsets in the Sc2O3∕GaN heterojunction system

4. Epitaxial growth of Sc2O3 films on GaN

5. Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

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1. The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress;IEEE Journal of the Electron Devices Society;2023

2. Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional;ACS Applied Electronic Materials;2022-05-19

3. Structural characters and band offset of Ga₂O₃–Sc₂O₃ alloys;Applied Physics Letters;2022-01-31

4. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices;Materials;2022-01-21

5. Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2021-10

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