Accurate Band Offset Prediction of Sc2O3/GaN and θ-Al2O3/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional-Reference-Cited by-同舟云学术

Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Author:

Ni Jing¹,Hu Shunbo¹²^ORCID,Li Musen¹,Jia Fanhao¹³^ORCID,Qin Guanhua²,Li Qiang¹,Zhou Zimo¹,Zha Fangxing⁴,Ren Wei¹²⁴^ORCID,Wang Yin¹²⁴

Affiliation:

1. International Center for Quantum and Molecular Structures, Materials Genome Institute, Shanghai University, Shanghai 200444, China

2. Zhejiang Laboratory, Hangzhou 311100, China

3. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

4. Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Austrian Research Promotion Agency

Zhejiang Laboratory

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference36 articles.

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