Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Abstract

Abstract We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 μm thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, resulting in a RB voltage of ∼300 V while preserving the ON-resistance (R on,sp). Schottky contacts on etched i-GaN surface were realized through an optimized fabrication process based on tetramethylammonium hydroxide treatments. The fabricated RB-MOSFET had a low R on,sp of 4.75 mΩ cm2, current density of ∼0.9 kA cm−2 and a forward blocking voltage of 570 V.