GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Abstract

Abstract This work reports GaN quasi-vertical trench MOSFETs grown on 6-inch Si substrates. The device with single-trench design shows a specific ON-resistance of 0.84 mΩ·cm2, a maximum drain current density of 5.0 kA cm−2, and a breakdown voltage of 320 V, after fine-tuning of the channel doping and employment of a thick bottom dielectric process. The large-area (∼0.54 mm2) GaN-on-Si trench MOSFET with multiple-finger design shows an ON-current of 1.1 A, an ON-resistance of 4.0 Ω and a breakdown voltage of 205 V.