The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress-Reference-Cited by-同舟云学术

The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress

Published:2023 Issue: Volume:11 Page:426-431
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Shi Yijun¹^ORCID,Wu Shan¹,He Zhiyuan¹^ORCID,Cai Zongqi¹^ORCID,Cheng Liye¹^ORCID,Rao Yunliang¹,Xiao Qingzhong¹,Chen Yiqiang¹^ORCID,Lu Guoguang¹

Affiliation:

1. China Key Laboratory of Reliability Physics and Application Technology for Electronic Components, Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Natural Science Foundation of Guangdong Province

Guangzhou Basic and Applied Basic Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10188904.pdf?arnumber=10188904

Reference28 articles.

1. Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics

2. Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

4. Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

5. Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs