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Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

  • Published:2003-09-29 Issue:13 Volume:83 Page:2608-2610
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Danilin V. N.,Zhukova T. A.,Luo B.,Ren F.,Gila B. P.,Onstine A. H.,Abernathy C. R.,Pearton S. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment;The Journal of Physical Chemistry C;2019-08-12

2. Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance;The Journal of Physical Chemistry C;2016-06-30

3. Binary group III-nitride based heterostructures: band offsets and transport properties;Journal of Physics D: Applied Physics;2015-09-24

4. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

5. Deep traps in GaN-based structures as affecting the performance of GaN devices;Materials Science and Engineering: R: Reports;2015-08
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