Band offsets in the Sc2O3∕GaN heterojunction system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2194314
Reference26 articles.
1. Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices
2. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
3. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
4. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
5. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
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