In situX-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823809
Reference20 articles.
1. Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells
2. Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
3. Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
4. Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
5. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption
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1. X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface;physica status solidi (b);2017-01-06
2. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering;Japanese Journal of Applied Physics;2016-04-07
3. Estimation of bowing in hetero-epitaxial GaN-on-sapphire substrate at elevated temperatures by X-ray diffraction rocking curve measurement;Journal of Crystal Growth;2015-02
4. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2014-12
5. In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy;Journal of Applied Physics;2014-03-07
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