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Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering

  • Published:2016-04-07 Issue:5S Volume:55 Page:05FD03
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamamoto Tetsuya,Tamura Akira,Usami Shigeyoshi,Mitsunari Tadashi,Nagamatsu Kentaro,Nitta Shugo,Honda Yoshio,Amano Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting device;Light-Emitting Devices, Materials, and Applications XXIV;2020-02-25

2. Cp2Mg in-situ monitoring in a MOVPE reactor using a quantum cascade laser;Japanese Journal of Applied Physics;2019-05-01

3. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface;Journal of Crystal Growth;2019-02

4. MOCVD growth of nitride semiconductors;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018
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