Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16870/fulltext
Reference72 articles.
1. Solid phase immiscibility in GaInN
2. Atomic structure and phase stability ofInxGa1−xNrandom alloys calculated using a valence-force-field method
3. Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
5. Phase separation in InGaN/GaN multiple quantum wells
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