Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121911
Reference14 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. Recombination dynamics in InGaN quantum wells
5. Recombination dynamics in InGaN quantum wells
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements;physica status solidi (b);2017-11-13
2. Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1−xN/GaN Quantum Wells;Physical Review Applied;2017-06-30
3. Use of scanning near-field optical microscope with an aperture probe for detection of luminescent nanodiamonds;Laser Physics;2016-12-19
4. Scanning near-field optical microscopy of AlGaN epitaxial layers;SPIE Proceedings;2016-09-15
5. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film;Journal of Applied Physics;2015-11-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3