Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1528294
Reference23 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
3. Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces
4. Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces
5. Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers
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