Comparison of gate geometries for tunable, local barriers in InAs nanowires-Reference-Cited by-同舟云学术

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Comparison of gate geometries for tunable, local barriers in InAs nanowires

Published:2012-10-15 Issue:8 Volume:112 Page:084323
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dahl Nissen Peter,Sand Jespersen Thomas,Grove-Rasmussen Kasper,Márton Attila,Upadhyay Shivendra,Hannibal Madsen Morten,Csonka Szabolcs,Nygård Jesper

Funder

European Union

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759248

Reference48 articles.

1. Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires

2. One-dimensional heterostructures in semiconductor nanowhiskers

3. Growth of nanowire superlattice structures for nanoscale photonics and electronics

4. Epitaxial core–shell and core–multishell nanowire heterostructures

5. Remote p-Doping of InAs Nanowires

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots;Nanoscale Advances;2022

2. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor;Scientific Reports;2017-04-19

3. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation;Applied Physics Letters;2015-12-14

4. Formation of strain-induced quantum dots in gated semiconductor nanostructures;AIP Advances;2015-08

5. Resolving ambiguities in nanowire field-effect transistor characterization;Nanoscale;2015

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