Formation of strain-induced quantum dots in gated semiconductor nanostructures
Author:
Affiliation:
1. Quantum Measurement Division, NIST, Gaithersburg, Maryland, USA
2. Joint Quantum Institute and Dept. of Physics, University of Maryland, College Park, Maryland, USA
Funder
Labratory for Physical Sciences
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/8/1.4928320.pdf?itemId=/content/aip/journal/adva/5/8/10.1063/1.4928320&mimeType=pdf&containerItemId=content/aip/journal/adva
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