Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation-Reference-Cited by-同舟云学术

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Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

Published:2015-12-14 Issue:24 Volume:107 Page:243101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanta R.¹,Madsen M. H.²^ORCID,Liao Z.³^ORCID,Krogstrup P.¹,Vosch T.³^ORCID,Nygård J.¹,Jespersen T. S.¹^ORCID

Affiliation:

1. Center for Quantum Devices and Nano Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100, Denmark

2. Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800, Denmark

3. Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100, Denmark

Funder

Danish council for strategic research

Danish Ministry of science

Danish National Research Foundation

Carlsbergfondet (Carlsberg Foundation)

Lundbeckfonden (Lundbeck Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937442

Reference24 articles.

1. Nanowire-based one-dimensional electronics

2. Quantum computing based on semiconductor nanowires

3. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

4. Nanoscience and the nano-bioelectronics frontier

5. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

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