Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires-Reference-Cited by-同舟云学术

Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires

Published:2009-03-02 Issue:4 Volume:9 Page:1506-1510
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shtrikman Hadas¹,Popovitz-Biro Ronit¹,Kretinin Andrey¹,Houben Lothar¹,Heiblum Moty¹,Bukała Małgorzata¹,Galicka Marta¹,Buczko Ryszard¹,Kacman Perła¹

Affiliation:

1. Braun Center for Submicron Research, Electron Microscopy Unit, Weizmann Institute, Rehovot, Israel, Institute of Solid State Research, Research Center Jülich, 52425 Jülich, Germany, and Institute of Physics PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl803524s

Reference32 articles.

1. Vertical high-mobility wrap-gated InAs nanowire transistor

2. Directed Assembly of One-Dimensional Nanostructures into Functional Networks

3. Single-electron transistors in heterostructure nanowires

4. Nanowire electronic and optoelectronic devices

5. GaAs free‐standing quantum‐size wires

Cited by 161 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure;ACS Applied Materials & Interfaces;2024-05-31

2. Magnetic properties of Mn-doped InSb nanowires from first principles;Materials Research Express;2024-01-01

3. First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga₂O₃;Advanced Materials Interfaces;2023-07-23

4. Recent progress on Majorana in semiconductor-superconductor heterostructures—engineering and detection;Science China Physics, Mechanics & Astronomy;2023-04-04

5. Optically Tunable Transient Plasmons in InSb Nanowires;Advanced Materials;2023-03-03