InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure
Author:
Affiliation:
1. Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
2. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
Funder
Core Research for Evolutional Science and Technology
Japan Society for the Promotion of Science
Fusion Oriented REsearch for disruptive Science and Technology
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.4c00147
Reference37 articles.
1. Lilienfeld, J. E. Method and Apparatus for Controlling Electric Currents. US Patent 1,754,175, 1926.
2. The Transistor, A Semi-Conductor Triode
3. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
4. Kahng, D. Electrical Field Controlled Semiconductor Device. US Patent 4,102,230, 1960.
5. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
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