Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots-Reference-Cited by-同舟云学术

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

Published:2022 Issue:18 Volume:4 Page:3816-3823
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

An Sung Jin¹²,Bae Myung-Ho³^ORCID,Lee Myoung-Jae¹⁴⁵,Song Man Suk¹²,Madsen Morten H.⁶,Nygård Jesper⁶,Schönenberger Christian⁷⁸^ORCID,Baumgartner Andreas⁷⁸^ORCID,Seo Jungpil²⁴,Jung Minkyung¹⁴⁵^ORCID

Affiliation:

1. DGIST Research Institute, DGIST, Daegu 42988, Korea

2. Department of Emerging Materials Science, DGIST, Daegu 42988, Korea

3. Korea Research Institute of Standards and Science, Daejeon 34113, Korea

4. Institute of Next Generation Semiconductor Technology (INST), DGIST, Daegu 42988, Korea

5. Department of Interdisciplinary Engineering, DGIST, Daegu 42988, Korea

6. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

7. Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

8. Swiss Nanoscience Institute (SNI), University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Abstract

Adiabatic charge pumping in InAs nanowire double quantum dots.

Funder

Daegu Gyeongbuk Institute of Science and Technology

National Research Foundation of Korea

Korea Research Institute of Standards and Science

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Swiss Nanoscience Institute

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00372D

Reference47 articles.

1. Semiconductor qubits in practice

2. A two-qubit logic gate in silicon

3. Single-electron current sources: Toward a refined definition of the ampere

4. Robustness of single-electron pumps at sub-ppm current accuracy level

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