Thermal annealing effects of defect reduction in GaAs on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346156
Reference8 articles.
1. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
2. Dislocation reduction in epitaxial GaAs on Si(100)
3. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
4. Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes
5. Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y
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