Reduction of boron thermal diffusion in silicon by high energy fluorine implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1622434
Reference13 articles.
1. Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs
2. 2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant
3. Implantation and transient B diffusion in Si: The source of the interstitials
4. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
5. Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation
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