Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium-Reference-Cited by-同舟云学术

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Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

Published:2014-01-30 Issue:3 Volume:29 Page:035005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Edwardson C J,Coleman P G,El Mubarek H A W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=3/a=035005/pdf

Reference21 articles.

1. Activation and diffusion studies of ion-implanted p and n dopants in germanium

2. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

3. Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

4. Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion

5. Observation of fluorine-vacancy complexes in silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements;Silicon;2024-07-08

2. Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results;Applied Sciences;2019-06-15

3. Toward Defect Engineering Strategies to Optimize Energy and Electronic Materials;Applied Sciences;2017-06-30

4. Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy;Materials Science in Semiconductor Processing;2017-05

5. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F;Journal of Applied Physics;2016-07-07

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