Activation and diffusion studies of ion-implanted p and n dopants in germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1618382
Reference9 articles.
1. Elementary scattering theory of the Si MOSFET
2. III-V compound semiconductor devices: Optical detectors
3. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
4. Electrical properties and structure of boron implanted germanium
5. Diffusion of ion-implanted boron in germanium
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