1. Germanium-based transistors for future high performance and low power logic applications;Y C Yeo;IEEE International Electron Devices Meeting,2015
2. Graded Crystalline HfO? Gate Dielectric Layer for High-k/Ge MOS Gate Stack;C H Lee;Journal of the Electron Devices Society,2021
3. High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response;Y C Fu;IEEE International Electron Devices Meeting,2010
4. Strain Engineering in Highly Mismatched SiGe/Si Heterostructures;F Isa;Materials Science in Semiconductor Processing,2017
5. First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 ?S/?m in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters;H Wu;IEEE International Electron Devices Meeting,2015