Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1369611
Reference10 articles.
1. Ion implantation induced defects in epitaxial 4H–SiC
2. Low-dose ion implanted epitaxial 4H–SiC investigated by deep level transient spectroscopy
3. Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon
4. Pseudodonor nature of the DI defect in 4H-SiC
5. Growth of SiC by ?Hot-Wall? CVD and HTCVD
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