Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Funder
Innovation Technology Fund of Hong Kong
Hong Kong University of Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5000100
Reference19 articles.
1. Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2. InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
3. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
4. Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
5. Interfacial misfit array formation for GaSb growth on GaAs
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