Interfacial misfit array formation for GaSb growth on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3129562
Reference16 articles.
1. 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy
2. Electronic Spectroscopy of the AlSb Molecule: A Theoretical Study
3. Carrier Multiplication in Semiconductor Nanocrystals: Theoretical Screening of Candidate Materials Based on Band-Structure Effects
4. Defects in epitaxial multilayers
5. Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
Cited by 84 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy;ACS Applied Materials & Interfaces;2024-08-28
2. Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy;Advanced Physics Research;2024-08-22
3. Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE;Materials Science and Engineering: B;2024-07
4. Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers;AIP Advances;2024-03-01
5. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers;Japanese Journal of Applied Physics;2024-02-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3