2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1319967
Reference15 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
3. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
4. Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
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