Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE-Reference-Cited by-同舟云学术

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Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

Published:2024-07 Issue: Volume:305 Page:117424
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Gunes M.,Aydın M.,Donmez O.,Gumus C.,Erol A.,Marroquin J.F.R.,Felix J.F.,Yoshikawa A.,Geka H.,Kuze N.,Henini M.

Funder

Istanbul Üniversitesi

Istanbul University Scientific Research Projects Unit

Publisher

Elsevier BV

Reference53 articles.

1. Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1−xAlxSb asymmetric quantum well heterostructures;Gilbertson;Phys. Rev. b.,2009

2. Quantum transport in high-quality shallow InSb quantum wells;Lei;Appl. Phys. Lett.,2019

3. Quantized conductance and large g -factor anisotropy in insb quantum point contacts;Qu;Nano Lett.,2016

4. Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb;Bouarissa;Mater. Sci. Eng. B,1995

5. Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure;Donmez;Mater. Sci. Semicond. Process.,2023

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer;Applied Physics A;2024-06-26

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