Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2793186
Reference25 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
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3. Long-wavelength GaInNAs(Sb) lasers on GaAs
4. Room-temperature continuous-wave 1.55 [micro sign]m GaInNAsSb laser on GaAs
5. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
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