Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481782
Reference14 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
3. Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities
4. Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
5. The Polarity of GaN: a Critical Review
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