Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

Published:2021-02-01 Issue:2 Volume:11 Page:025009
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mirkhosravi F.¹^ORCID,Rashidi A.¹^ORCID,Gallagher J.²,Monavarian M.¹^ORCID,Aragon A.¹^ORCID,Ahn K.³,Ooi Y. K.³,Lintereur A.²,Mace E. K.⁴^ORCID,Scarpulla M. A.¹⁵^ORCID,Feezell D.¹

Affiliation:

1. Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87106, USA

2. Nuclear Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA

4. Pacific Northwest National Laboratory, Richland, Washington 99254, USA

5. Material Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Funder

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0021382

Reference40 articles.

1. GaN-Based RF Power Devices and Amplifiers

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4. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

5. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

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