N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology-Reference-Cited by-同舟云学术

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N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Published:2009-02 Issue:2 Volume:30 Page:113-116
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chung J.W.,Piner E.L.,Palacios T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4757318/04729642.pdf?arnumber=4729642

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off;Journal of Alloys and Compounds;2024-11

2. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology;Crystals;2024-03-04

3. Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer;ACS Applied Nano Materials;2023-07-25

4. Epitaxial Co on GaN by decomposition of template CoO;Journal of Materials Chemistry C;2023

5. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11

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