Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337641
Reference23 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
4. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
5. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
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