Te homogeneous precipitation in Ge dislocation loop vicinity
Author:
Affiliation:
1. IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France
Funder
Agence Nationale de la Recherche (ANR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953627
Reference63 articles.
1. High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation
2. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
3. Academic and industry research progress in germanium nanodevices
4. Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
5. First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates
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1. PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects;Scripta Materialia;2018-06
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