Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction-Reference-Cited by-同舟云学术

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Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction

Published:2005-04-18 Issue:16 Volume:86 Page:162112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Teisseyre H.,Skierbiszewski C.,Łucznik B.,Kamler G.,Feduniewicz A.,Siekacz M.,Suski T.,Perlin P.,Grzegory I.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1899258

Reference13 articles.

1. Growth and optical properties of GaN/AlN quantum wells

2. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates

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1. Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence;Optical Materials Express;2015-10-19

2. Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire;Electronic Materials Letters;2013-09

3. Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures;Physical Review B;2011-06-30

4. In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy;Journal of Crystal Growth;2010-02

5. Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds;Technology of Gallium Nitride Crystal Growth;2010

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