Growth and optical properties of GaN/AlN quantum wells-Reference-Cited by-同舟云学术

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Growth and optical properties of GaN/AlN quantum wells

Published:2003-06-09 Issue:23 Volume:82 Page:4154-4156
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Adelmann C.,Sarigiannidou E.,Jalabert D.,Hori Y.,Rouvière J.-L.,Daudin B.,Fanget S.,Bru-Chevallier C.,Shibata T.,Tanaka M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1581386

Reference20 articles.

1. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

2. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells

3. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

4. Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

5. Giant electric fields in unstrained GaN single quantum wells

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1. Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential;Crystal Growth & Design;2023-05-17

2. Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations;The Journal of Chemical Physics;2022-12-28

3. Photoluminescence of Multiple GaN/AlN Quantum Wells;Optoelectronics, Instrumentation and Data Processing;2021-09

4. Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures;Nano Express;2021-07-13

5. Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques;Nanotechnology;2019-03-14

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